منابع مشابه
Raman Spectrum of silicon nanowires
We measure the effects of phonon confinement on the Raman spectra of silicon nanowires (SiNWs). We show how previous reports of phonon confinement in SiNWs and nanostructures are actually inconsistent with phonon confinement, but are due to the intense local heating caused by the laser power used for Raman measurements. This is peculiar to nanostructures, and would require orders of magnitude h...
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Raman investigation of MoSe2 was carried out with eight different excitation energies. Seven peaks, including E1g, A1g, E2g(1), and A2u(2) peaks are observed in the range of 100-400 cm(-1). The phonon modes are assigned by comparing the peak positions with theoretical calculations. The intensities of the peaks are enhanced at different excitation energies through resonance with different optica...
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The powder X-ray diffraction patterns, Raman spectra, magnetization, electron spin resonance (ESR), and resistivity for Pr0.5Ca0.4Sr0.1MnO3 were studied. The Raman spectra change dramatically during the charge ordering transition, and the hardening of the 450 cm mode of the spectra is due to the unit cell reduction of the antiferromagnetic phase. The two resonance signals in the first different...
متن کاملThe Raman spectrum of isolated water clusters.
Cold water oligomers (H2O)n and (D2O)n with n = 2-5 are assigned in spontaneous Raman scattering spectra of seeded rare gas expansions for the first time. Comparison with infrared spectra provides direct experimental insights into the hydrogen bond-mediated excitonic OH oscillator coupling, which is responsible for ultrafast energy transfer between water molecules, usually suppressed by isotopi...
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Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality. We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers. The D peak second order changes in shape, width, and position for an increasing number of layers, reflecting the change in the electron bands via a double resonant Raman process...
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ژورنال
عنوان ژورنال: REVISTA IPT TECNOLOGIA E INOVAÇÃO
سال: 2018
ISSN: 2526-5830
DOI: 10.34033/2526-5830-v2n8-1